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The vast majority of these advantages are enabled by TSMC's new gate-all-around (GAA) nanosheet transistors along with N2 NanoFlex design-technology co-optimization capability and some other ...

At the same time, TSMC is aggressively developing its 2nm node, expected to start production by 2025, using GAA technology, which provides better power efficiency and performance than FinFET.

TSMC will not form any partnership with Samsung to mass-produce its new flagship Exynos series chips, according to South ...

Samsung’s 3nm GAA process is said to have low yield rates, pushing the company to seek external support. While TSMC seemed like an ideal partner, the company reportedly turned down the request ...

TSMC is on a roll as it just reported fourth-quarter revenue up 37% year-over-year to $26.88 billion. What TSMC calls ...

Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, ...

GAA uses horizontal nanosheets placed vertically as the gate completely covers the channel on all four sides reducing current leaks and improving the drive current. This results in greater performance ...

TSMC started mass production of cutting edge ... the FinFET transistor process at the 3nm node and will instead use GAA surround gate transistors. But, during an investors meeting in April ...

After FinFET comes gate all around, or GAA, which will be adopted on TSMC's 2 nm and Samsung's 3 nm nodes. Successive technologies improve electrical performance and miniaturization to fit as many ...